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JANSR2N7598U3CE - Radiation Hardened Power MOSFET

General Description

IR HiRel R6 technology provides superior power MOSFETs for space applications.

cm2/mg.

Key Features

  • Low RDS(on).
  • Fast switching.
  • Single event effect (SEE) hardened.
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Enhanced ceramic package for direct to pcb mounting.
  • Light weight.
  • Surface mount with low CTE mismatch to PCB.
  • ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 600V.
  • ID : 3.4A.
  • RDS(on), max : 3.1.
  • QG, max: 52nC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRHNKC67C30 (JANSR2N7598U3CE) Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) 600V, 3.4A, N-channel, R6 Technology PD-98006A Features • Low RDS(on) • Fast switching • Single event effect (SEE) hardened • Low total gate charge • Simple drive requirements • Hermetically sealed • Enhanced ceramic package for direct to pcb mounting • Light weight • Surface mount with low CTE mismatch to PCB • ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary • BVDSS: 600V • ID : 3.4A • RDS(on), max : 3.1 • QG, max: 52nC • REF: MIL-PRF-19500/781 Potential Applications • DC-DC converter • Motor drives • Electric ion propulsion systems SMD-0.