G4BC30FD Description
PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
G4BC30FD Key Features
- Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
- IGBT co-packaged with HEXFREDTM ultrafast
- Industry standard TO-220AB package
- Generation -4 IGBT's offer highest efficiencies
- IGBT's optimized for specific application conditions
- Designed to be a "drop-in" replacement for equivalent