IRF3305 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Height: 16.51 mm
Description
Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device. These features, coupled with 175°C junction operating temperature and low G S ID = 75A Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM TO-220AB Max.
