IRF7904UPBF Description
Units V 11 8.9 89 2.0 1.3 0.016 W/°C °C W A c RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 1 09/19/06 IRF7904UPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. VDS = VGS, ID = 25µA V mV/°C Q2:.
IRF7904UPBF Key Features
- Dual SO-8 MOSFET for POL Converters in Notebook puters, Servers, Graphics Cards, Game Consoles and Set-Top Box
- Very Low RDS(on) at 4.5V VGS
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- 20V VGS Max. Gate Rating
- Improved Body Diode Reverse Recovery
- 100% Tested for RG