RIC7S113 Description
It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100 krad(Si) and single effect effects (SEE) characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. RIC7S113 enables high performance from key parameters. The high gate drive strength, low propagation delay and matching timing for high and low side drive help reduce loss...
RIC7S113 Key Features
- Independent high and low side gate driver
- Independent bias supply for logic and power with ±5V offset
- Wide bias supply voltage range
- Undervoltage lockout for both channels
- CMOS Schmitt trigger inputs with internal pull-down resistor
- Integrated level shift for high side drive
- Cycle by cycle edge triggered shutdown logic pin
- Matched propagation delay for both channels
- Hermetically sealed package
- Lightweight