Datasheet4U Logo Datasheet4U.com

2N7288D - Radiation Hardened N-Channel Power MOSFETs

Datasheet Summary

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 9A, 250V, RDS(on) = 0.415Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5i.

📥 Download Datasheet

Datasheet preview – 2N7288D

Datasheet Details

Part number 2N7288D
Manufacturer Intersil Corporation
File Size 46.73 KB
Description Radiation Hardened N-Channel Power MOSFETs
Datasheet download datasheet 2N7288D Datasheet
Additional preview pages of the 2N7288D datasheet.

📁 Similar Datasheet

  • 2N720 - Silicon NPN Transistor (Texas Instruments)
  • 2N720A - Silicon Planar Epitaxial NPN transistor (STMicroelectronics)
  • 2N720A - Silicon NPN Transistor (Texas Instruments)
  • 2N720A - NPN LOW POWER SILICON TRANSISTOR (Microsemi)
  • 2N720A - NPN SILICON PLANAR SWITCHING TRANSISTOR (CDIL)
  • 2N720A - GENERAL PURPOSE TRANSISTOR (Motorola)
  • 2N721 - PNP silicon annular transistor (Motorola)
  • 2N7218 - POWER MOSFET (ETC)
  • 2N7219 - POWER MOSFET (ETC)
  • 2N7219 - NCHANNEL POWER MOSFET (Seme LAB)
Other Datasheets by Intersil Corporation
  • 2N7288H - Radiation Hardened N-Channel Power MOSFETs
  • 2N7288R - Radiation Hardened N-Channel Power MOSFETs
  • 2N7400 - N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
S E M I C O N D U C T O R REGISTRATION PENDING Available as FRS244 (D, R, H) November 1994 2N7288D, 2N7288R 2N7288H Radiation Hardened N-Channel Power MOSFETs Package TO-257AA Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.
Published: |