2N7288H - Radiation Hardened N-Channel Power MOSFETs

Product Overview

Intersil Corporation

Datasheet Details

Part number	2N7288H
Manufacturer	Intersil Corporation
File Size	46.73 KB
Description	Radiation Hardened N-Channel Power MOSFETs
Datasheet	2N7288H Datasheet
Additional preview pages of the 2N7288H datasheet.

Product details

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

9A, 250V, RDS(on) = 0.415Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5i.

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Other Datasheets by Intersil Corporation

2N7288D - Radiation Hardened N-Channel Power MOSFETs
2N7288R - Radiation Hardened N-Channel Power MOSFETs
2N7400 - N-Channel Power MOSFET

Published: Mar 22, 2005 |