Datasheet4U Logo Datasheet4U.com

ACS03MS - Radiation Hardened Quad 2-Input NAND Gate

Key Features

  • Pinouts.
  • Devices QML Qualified in Accordance with MIL-PRF-38535.
  • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Total Dose.
  • . . >300K RAD (Si).
  • Single Event Upset (SEU) Immunity: 100 MEV-cm2/mg.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ACS0804 Compact Direct AC Line LED Driver Altoran
ACS101A Acapella Optical Modem Semtech Corporation
ACS102-5T1 AC LINE SWITCH STMicroelectronics
ACS102-5TA AC LINE SWITCH STMicroelectronics
ACS102-6T Transient protected AC switch STMicroelectronics

Other Datasheets by Intersil (now Renesas)

Part Number Description
ACS00MS Radiation Hardened Quad 2-Input NAND Gate
ACS02MS Radiation Hardened Quad 2-Input NOR Gate
ACS04MS Radiation Hardened Hex Inverter
ACS05MS Radiation Hardened Hex Inverter
ACS08MS Radiation Hardened Quad 2-Input AND Gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ACS03MS January 1996 Radiation Hardened Quad 2-Input NAND Gate with Open Drain Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) • Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) • SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg • Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse • Dose Rate Survivability . . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range . . . . . . . . . . . . . . . .