ACS03MS Overview
ACS03MS January 1996 Radiation Hardened Quad 2-Input NAND Gate with Open Drain.
ACS03MS Key Features
- Devices QML Qualified in Accordance with MIL-PRF-38535
- Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan
- 1.25 Micron Radiation Hardened SOS CMOS
- Total Dose
- >300K RAD (Si)
- Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold
- >100 MEV-cm2/mg
- Dose Rate Upset
- >1011 RAD (Si)/s, 20ns Pulse