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ACS21MS - Radiation Hardened Dual 4-Input AND Gate

Description

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Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Qualified Per MIL-PRF-38535 Requirements.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max. ).
  • . . 3 x 105 RAD(Si) - SEU Immunity.
  • . . . 100MeV/(mg/cm2).
  • Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC).
  • Output Current.

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Datasheet preview – ACS21MS

Datasheet Details

Part number ACS21MS
Manufacturer Intersil Corporation
File Size 38.42 KB
Description Radiation Hardened Dual 4-Input AND Gate
Datasheet download datasheet ACS21MS Datasheet
Additional preview pages of the ACS21MS datasheet.

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Other Datasheets by Intersil Corporation
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Full PDF Text Transcription

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ACS21MS Data Sheet July 1999 File Number 4757 Radiation Hardened Dual 4-Input AND Gate The Radiation Hardened ACS21MS is a Dual 4-Input AND Gate. For each gate, a HIGH level on all inputs results in a HIGH level on the Y output. A LOW level on any input results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS21MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.
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