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ACS21MS Datasheet Radiation Hardened Dual 4-Input AND Gate

Manufacturer: Intersil (now Renesas)

Overview: ACS21MS Data Sheet July 1999 File Number 4757 Radiation Hardened Dual 4-Input AND Gate The Radiation Hardened ACS21MS is a Dual 4-Input AND Gate. For each gate, a HIGH level on all inputs results in a HIGH level on the Y output. A LOW level on any input results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS21MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS21MS are contained in SMD 5962-98629. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.

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Key Features

  • QML Qualified Per MIL-PRF-38535 Requirements.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max. ).
  • . . 3 x 105 RAD(Si) - SEU Immunity.
  • . . . 100MeV/(mg/cm2).
  • Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC).
  • Output Current.

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