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ACS27MS - Radiation Hardened Triple 3-Input NOR Gate

Description

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Features

  • QML Qualified Per MIL-PRF-38535 Requirements.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max. ).
  • . . 3 x 105 RAD(Si) - SEU Immunity.
  • . . . 100MeV/(mg/cm2).
  • Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC).
  • Output Current.

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Datasheet Details

Part number ACS27MS
Manufacturer Intersil
File Size 38.57 KB
Description Radiation Hardened Triple 3-Input NOR Gate
Datasheet download datasheet ACS27MS Datasheet
Additional preview pages of the ACS27MS datasheet.

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Full PDF Text Transcription

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ACS27MS Data Sheet July 1999 File Number 4758 Radiation Hardened Triple 3-Input NOR Gate The Radiation Hardened ACS27MS is a Triple 3-Input NOR Gate. For each gate, a HIGH level on any input results in a LOW level on the Y output. A LOW level on all inputs results in a HIGH level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS27MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.
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