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CD4011BT - CMOS Quad 2-Input NAND Gate

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • QML Class T, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEP Effective LET > 75 MEV/gm/cm2.
  • Propagation Delay Time = 60ns (typ. ) at CL = 50pF, VDD = 10V.
  • Buffered Inputs and Outputs.
  • Standardized Symmetrical Output Characteristics.
  • 100% Tested for Maximum Quiescent Current at 20V Specifications Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD number.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CD4011BT Data Sheet July 1999 File Number 4620.1 CMOS Quad 2-Input NAND Gate Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The CD4011BT, Quad 2-Input NAND gate provides the system designer with direct implementation of the NAND function and supplements the existing family of CMOS gates. All inputs and outputs are buffered. Features • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEP Effective LET > 75 MEV/gm/cm2 • Propagation Delay Time = 60ns (typ.