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FSJ055D - N-Channel Power MOSFETs

Features

  • 70A, 60V, rDS(ON) = 0.012Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 6.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

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Datasheet preview – FSJ055D

Datasheet Details

Part number FSJ055D
Manufacturer Intersil
File Size 325.08 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet FSJ055D Datasheet
Additional preview pages of the FSJ055D datasheet.

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Full PDF Text Transcription

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FSJ055D, FSJ055R Data Sheet October 1999 File Number 4250.5 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
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