FSJ9055D - 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Product Overview

Intersil Corporation

Datasheet Details

Part number	FSJ9055D
Manufacturer	Intersil Corporation
File Size	66.24 KB
Description	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Datasheet	FSJ9055D Datasheet
Additional preview pages of the FSJ9055D datasheet.

Product details

Description

The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Features

55A, -60V, rDS(ON) = 0.029Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 6.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

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Published: Mar 23, 2005 |