FSYA150R Datasheet Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

FSYA150R radiation hardened/ segr resistant n-channel power mosfets by Intersil (now Renesas) - Datasheet Preview

Datasheet Details

Part number	FSYA150R
Manufacturer	Intersil (now Renesas)
File Size	57.55 KB
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Download	FSYA150R Download (PDF)

Overview

FSYA150D, FSYA150R Data Sheet January 1999 File Number 4648 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.

Key Features

39A, 100V, rDS(ON) = 0.055Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 7.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

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