FSYA250D Datasheet 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

FSYA250D 27a/ 200v/ 0.100 ohm/ rad hard/ segr resistant/ n-channel power mosfets by Intersil (now Renesas) - Datasheet Preview

Datasheet Details

Part number	FSYA250D
Manufacturer	Intersil (now Renesas)
File Size	46.23 KB
Description	27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Download	FSYA250D Download (PDF)

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.

Overview

FSYA250D, FSYA250R June 1998 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

Key Features

27A, 200V, rDS(ON) = 0.100Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 12nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

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