FSYC9055D datasheet by Intersil (now Renesas).
| Part number | FSYC9055D |
|---|---|
| Datasheet | FSYC9055D_IntersilCorporation.pdf |
| File Size | 51.81 KB |
| Manufacturer | Intersil (now Renesas) |
| Description | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
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The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is bined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate...
View all Intersil (now Renesas) datasheets
| Part Number | Description |
|---|---|
| FSYC9055R | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
| FSYC055D | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| FSYC055R | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| FSYC160D | Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
| FSYC160R | Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
| FSYC163D | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| FSYC163R | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| FSYC260D | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
