Datasheet4U Logo Datasheet4U.com

FSYC9055R - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Description

The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

  • Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FSYA450R N-Channel Power MOSFETs Intersil

Other Datasheets by Intersil (Renesas)

Part Number Description
FSYC9055D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSYC9160D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSYC9160R Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSYC055D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC055R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Full PDF Text Transcription

Click to expand full text
FSYC9055D, FSYC9055R July 1999 Features • Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Published: |