HCTS365MS Description
The Intersil HCTS365MS.
HCTS365MS Key Features
- 3 Micron Radiation Hardened CMOS SOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Latch-Up Free Under Any Conditions
- Fanout (Over Temperature Range)
- Bus Driver Outputs: 15 LSTTL Loads
- Military Temperature Range: -55oC to +125oC