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HGTD10N50F1 Datasheet 10a/ 400v And 500v N-channel IGBTs

Manufacturer: Intersil (now Renesas)

Overview: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR.

General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.

These types can be operated directly from low power integrated circuits.

PACKAGING AVAILABILITY PART NUMBER HGTD10N40F1 HGTD10N50F1 HGTD10N40F1S HGTD10N50F1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G10N40 G10N50 G10N40 G10N50 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number.

Key Features

  • 10A, 400V and 500V.
  • VCE(ON) 2.5V Max.
  • TFALL ≤1.4µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.

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