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HGTD10N50F1 - 10A/ 400V and 500V N-Channel IGBTs

General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.

Key Features

  • 10A, 400V and 500V.
  • VCE(ON) 2.5V Max.
  • TFALL ≤1.4µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HGTD10N50F1S 10A/ 400V and 500V N-Channel IGBTs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON) 2.5V Max. • TFALL ≤1.4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.