HGTD8P50G1 Overview
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a plementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power...
HGTD8P50G1 Key Features
- 8A, 500V
- 3.7V VCE(SAT)
- Typical Fall Time
- 1800ns
- High Input Impedance
- TJ = +150oC