HGTD8P50G1S Overview
Key Specifications
Max Operating Temp: 150 °C
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations.
Key Features
- 3.7V VCE(SAT)
- Typical Fall Time
- High Input Impedance
- TJ = +150oC (FLANGE) COLLECTOR
