HGTG12N60D1 Datasheet (Intersil)

Part HGTG12N60D1
Description N-Channel IGBT
Manufacturer Intersil
Size 36.74 KB
HGTG12N60D1 Datasheet (PDF) Download
Pricing from 6.22 USD, available from Rochester Electronics and Worldway Electronics.
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Intersil

HGTG12N60D1 Overview

Key Specifications

Max Operating Temp: 150 °C

Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Key Features

  • Latch Free Operation
  • Typical Fall Time <500ns
  • Low Conduction Loss
  • With Anti-Parallel Diode
HGTG12N60D1 datasheet preview

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 606 25+ : 6.22 USD
100+ : 5.91 USD
500+ : 5.6 USD
1000+ : 5.29 USD		 View Offer
Worldway Electronics 10855 7+ : 5.319 USD
10+ : 5.2126 USD
100+ : 5.0531 USD
500+ : 4.8935 USD		 View Offer

Related Datasheets

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HGTG12N60A4D Fairchild Semiconductor N-Channel IGBT
HGTG12N60C3D Fairchild Semiconductor N-Channel IGBT
HGTG12N60A4 Fairchild Semiconductor N-Channel IGBT
HGTG12N60B3 Fairchild Semiconductor N-Channel IGBT
G12N60C3D Fairchild Semiconductor HGTG12N60C3D
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