HGTG12N60D1 Overview
The IGBT is a MOS gated high voltage switching device bining the best.
HGTG12N60D1 Key Features
- 12A, 600V
- Latch Free Operation
- Typical Fall Time <500ns
- Low Conduction Loss
- With Anti-Parallel Diode
- tRR < 60ns
| Part number | HGTG12N60D1 |
|---|---|
| Datasheet | HGTG12N60D1_IntersilCorporation.pdf |
| File Size | 36.74 KB |
| Manufacturer | Intersil (now Renesas) |
| Description | N-Channel IGBT |
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The IGBT is a MOS gated high voltage switching device bining the best.
See all Intersil (now Renesas) datasheets
| Part Number | Description |
|---|---|
| HGTG12N60D1D | N-Channel IGBT |
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| HGTG12N60A4D | N-Channel IGBT |
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