HGTG12N60D1D - N-Channel IGBT

Intersil (now Renesas)

General Description

The IGBT is a MOS gated high voltage switching device combining the best

Key Features

12A, 600V.
Latch Free Operation.
Typical Fall Time.

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HGTG12N60D1D n-channel igbt by Intersil (now Renesas) - Datasheet Preview

Datasheet Details

Part number	HGTG12N60D1D
Manufacturer	Intersil (now Renesas)
File Size	36.74 KB
Description	N-Channel IGBT
Datasheet	HGTG12N60D1D Datasheet

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Part Number	Description
HGTG12N60D1	N-Channel IGBT
HGTG12N60A4	N-Channel IGBT
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HGTG12N60C3D	N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.