HGTG24N60D1 Datasheet | Intersil

HGTG24N60D1 May 1995 24A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features - 24A, 600V - Latch Free Operation - Typical Fall Time <500ns - High Input Impedance - Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG24N60D1 PACKAGE TO-247 BRAND G24N60D1 E Terminal Diagram N-CHANNEL ENHANCEMENT...