HGTG24N60D1D Datasheet | Intersil

HGTG24N60D1D April 1995 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features - 24A, 600V - Latch Free Operation - Typical Fall Time <500ns - Low Conduction Loss - With Anti-Parallel Diode - tRR < 60ns Description The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E PACKAGING AVAILABILITY PART NUMBER HGTG24N60D1D PACKAGE TO-247 BRAND G24N60D1D NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specific HGTG24N60D1D 600 600 40 24 96 ±25 60A at 0.8 BVCES 40 24 125 1.0 -55 to +150 260 UNITS V V A A A V A A W W/oC oC...