HGTH20N40E1
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
Key Features
- VCE(ON) 2.5V
- TFI 1µs, 0.5µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
- No Anti-Parallel Diode
