HGTH20N40E1D
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region.
Key Features
- 20A, 400V and 500V
- VCE(ON) 2.5V Max
- TFALL 1µs, 0.5µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
- Anti-Parallel Diode Terminal Diagram Applications
- Power Supplies
- Motor Drives
- Protective Circuits G N-CHANNEL ENHANCEMENT MODE C
