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HGTP10N50E1 - N-Channel IGBT

General Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.

Key Features

  • 10A and 12A, 400V and 500V.
  • VCE(ON): 2.5V Max.
  • TFI: 1µs, 0.5µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.
  • No Anti-Parallel Diode.

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Full PDF Text Transcription for HGTP10N50E1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HGTP10N50E1. For precise diagrams, and layout, please refer to the original PDF.

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLE...

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annel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1µs, 0.

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