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HGTP10N50F1D Datasheet

Manufacturer: Intersil (now Renesas)
HGTP10N50F1D datasheet preview

Datasheet Details

Part number HGTP10N50F1D
Datasheet HGTP10N50F1D_IntersilCorporation.pdf
File Size 34.04 KB
Manufacturer Intersil (now Renesas)
Description N-Channel IGBT
HGTP10N50F1D page 2 HGTP10N50F1D page 3

HGTP10N50F1D Overview

The IGBT is a MOS gated high voltage switching device bining the best.

HGTP10N50F1D Key Features

  • 10A, 400V and 500V
  • Latch Free Operation
  • Typical Fall Time < 1.4µs
  • High Input Impedance
  • Low Conduction Loss
  • Anti-Parallel Diode
  • tRR < 60ns
Intersil (now Renesas) logo - Manufacturer

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