HS-6664RH - Radiation Hardened 8K x 8 CMOS PROM

Datasheet Summary

Description

The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format.

The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation.

Features

1.2 Micron Radiation Hardened Bulk CMOS.
Total Dose 3 x 10 RAD (Si).
Transient Output Upset >5 x 108 RAD (Si)/s.
LET >100 MEV-cm2/mg.
Fast Access Time - 35ns (Typical).
Single 5V Power Supply.
Single Pulse 10V Field Programmable.
Synchronous Operation.
On-Chip Address Latches.
Three-State Outputs.
NiCr Fuses.
Low Standby Current.

Intersil Corporation

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Datasheet Details

Part number	HS-6664RH
Manufacturer	Intersil Corporation
File Size	222.21 KB
Description	Radiation Hardened 8K x 8 CMOS PROM
Datasheet	HS-6664RH Datasheet
Additional preview pages of the HS-6664RH datasheet.

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Full PDF Text Transcription

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HS-6664RH September 1995 Radiation Hardened 8K x 8 CMOS PROM Pinouts 5 Features • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10 RAD (Si) • Transient Output Upset >5 x 108 RAD (Si)/s • LET >100 MEV-cm2/mg • Fast Access Time - 35ns (Typical) • Single 5V Power Supply • Single Pulse 10V Field Programmable • Synchronous Operation • On-Chip Address Latches • Three-State Outputs • NiCr Fuses • Low Standby Current <500µA (Pre-Rad) • Low Operating Current <15mA/MHz • Military Temperature Range -55 oC 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.

Published: Mar 26, 2005 |