HS9A-65647RH-Q Overview
The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.
HS9A-65647RH-Q Key Features
- 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 105 RAD (Si)
- Transient Upset >1 x 1011 RAD (Si)/s
- Single Event Upset < 1 x 10-12 Errors/Bit-Day
- Latch-up Free
- LET Threshold >250 MEV/mg/cm2
- Low Standby Supply Current 10mA (Max)
- Low Operating Supply Current 100mA (2MHz)
- Fast Access Time 50ns (Max), 35ns (Typ)
- High Output Drive Capability