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IRF350 - N-Channel Power MOSFET

Key Features

  • 15A, 400V.
  • rDS(ON) = 0.300Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF350.

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Other Datasheets by Intersil (now Renesas)

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IRF320 N-Channel Power MOSFET
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IRF330 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF350 Data Sheet March 1999 File Number 1826.3 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA9399. Features • 15A, 400V • rDS(ON) = 0.