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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF350
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature ·Rugged
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±20
V V
Drain Current-continuous@ TC=25℃ 15 A
Total Dissipation@TC=25℃
150 W
Max.
IRF350 Datasheet
