IRF352
DESCRIPTION
- silicon Gate for fast switching at elevate
- rugged
APPLICATIONS
- high voltage,high speed applications such as off-line
Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±20
Drain Current-continuous@ TC=25℃ 13 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdf Factory Pro
.fineprint.cn
INCHANGE Semiconductor isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25m A
VGS(TH) Gate Threshold...
