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IRF353 - N-Channel MOSFET Transistor

General Description

silicon Gate for fast switching at elevate rugged APPLICATIONS

Switching power supplies,AC and DCmotor controls relay and solenoid driver.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF353 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·high voltage,high speed applications such as off-line Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 13 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 30 ℃/W ℃/W isc website:www.iscsemi.