IRF620 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600.

Datasheet Details

Part number	IRF620
Manufacturer	Intersil (now Renesas)
File Size	54.98 KB
Description	N-Channel Power MOSFET
Datasheet	IRF620_IntersilCorporation.pdf

Key Features

5.0A, 200V.
rDS(ON) = 0.800Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF620 NOTE:.

IRF620 Distributor

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