| Part Number | IRF620 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF62.
*Low RDS(on) *VGS Rated at ±20V *Silicon Gate for Fast Switching Speed *Rugged *Low Drive Requirements isc Product Specification IRF620 *DESCRITION *Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. *ABSOL. |
IRF620 Datasheet and Specifications PDF
The IRF620 is a N-Channel Mosfet Transistor.
| Part Number | IRF620 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Data Sheet
January 2002
IRF620
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested,.
* 5.0A, 200V * rDS(ON) = 0.800Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S . |
| Part Number | IRF620 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Intersil |
| Overview |
IRF620
Data Sheet June 1999 File Number
1577.3
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi.
* 5.0A, 200V * rDS(ON) = 0.800Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info. |
| Part Number | IRF620 Datasheet |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview |
IRF620 IRF620FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF620 IRF620FI
s s s s
V DSS 200 V 200 V
R DS( on) < 0.8 Ω < 0.8 Ω
ID 6A 4A
TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHN.
6 4 24 70 0.56 -65 to 150 150 4 2 24 30 0.24 2000
Unit V V V A A A W W/ o C V
o o
C C
( *) Pulse width limited by safe operating area November 1996 1/9 IRF620/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 300 ISOWATT220 4.17 o o o . |