STMicroelectronics IRF620
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
| Part No. | IRF620 |
|---|---|
| Datasheet | IRF620 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Parameter IRF620 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.) at Tc = 25 oC Drain Current (cont.) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value IRF620FI 200 200 ± 20 6 4 24 70 0.56 -65 to 150 150 4 2 24 30 0.24 2000 Unit V V V A A A W W/ o C V o o C C (●) Pulse width limited by safe operating area November 1996 1/9 IRF620/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 300 ISOWATT22...
