Datasheet Summary
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Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise Symbol
Parameter
Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage
Test Conditions
VDS = 200VDC, VGS = 0VDC VDS = 160VDC, VGS = 0VDC Tj=125 C VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA
Value Min 200 Typ Max Unit Volt µA nA nA Volt
V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS IGSS VGS(th)
260 100 30 7.2 19 22 13
25 250 100 -100 4.0 0.80 14 3.0 7.9
Static Drain to Source On
- Resistance RDS(on) VGS= 10VDC, ID = 3.1A Gate Charge...
