Datasheet Details
| Part number | IRF620A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 64.30 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF620A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF620A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 64.30 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF620A-InchangeSemiconductor.pdf |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 5A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 47 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc Product Specification ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.65 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc IRF620A N-Channel isc Product Specification MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF620A | Power MOSFET | Fairchild Semiconductor |
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IRF620 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics |
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IRF620 | N-Channel Power MOSFET | Intersil Corporation |
|
IRF620 | N-Channel Power MOSFET | Fairchild Semiconductor |
 |
IRF620 | Power MOSFET | TRANSYS Electronics |
| Part Number | Description |
|---|---|
| IRF620 | N-Channel Mosfet Transistor |
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