IRF9130 Description
IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,...
IRF9130 Key Features
- 12A, -100V
- rDS(ON) = 0.30Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance