Datasheet Details
| Part number | IRF9130 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 58.50 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | IRF9130_IntersilCorporation.pdf |
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Overview: IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17511.
| Part number | IRF9130 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 58.50 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | IRF9130_IntersilCorporation.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF9130 | P-Channel Power MOSFET | Samsung semiconductor |
 |
IRF9130 | P-Channel Power MOSFET | Seme LAB |
 |
IRF9130 | P-Channel Power MOSFET | International Rectifier |
|
IRF9130SMD | P-Channel Power MOSFET | Seme LAB |
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