IRFD9110 Overview
IRFD9110 Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRFD9110 Key Features
- 0.7A, 100V
- rDS(ON) = 1.200Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
