Datasheet Details
| Part number | IRFD9110 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 54.39 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | IRFD9110_IntersilCorporation.pdf |
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Overview: IRFD9110 Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541.
| Part number | IRFD9110 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 54.39 KB |
| Description | P-Channel Power MOSFET |
| Datasheet | IRFD9110_IntersilCorporation.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFD9110 | Power MOSFET | International Rectifier |
 |
IRFD9110 | P-Channel Power MOSFET | Fairchild Semiconductor |
 |
IRFD9110 | Power MOSFET | Vishay |
|
IRFD9110PbF | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRFD9120 | P-Channel Power MOSFET |
| IRFD9220 | P-Channel Power MOSFET |
| IRFD110 | N-Channel Power MOSFET |
| IRFD120 | N-Channel Power MOSFET |
| IRFD210 | N-Channel Power MOSFET |
| IRFD220 | N-Channel Power MOSFET |
| IRFD310 | N-Channel Power MOSFET |
| IRFD320 | N-Channel Power MOSFET |
| IRF120 | Power MOSFET |
| IRF121 | N-Channel Power MOSFET |