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IRFP245 - N-Channel Power MOSFETs

Download the IRFP245 datasheet PDF. This datasheet also covers the IRFP244 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 15A and 14A, 275V and 250V.
  • rDS(ON) = 0.28Ω and 0.34Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 275V, 250VDC Rated, 120VAC Line System Operation.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFP244 IRFP245 IRFP24.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFP244_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP245 N-Channel MOSFET Transistor Inchange Semiconductor
IRFP240 N-Channel MOSFET Transistor Inchange Semiconductor
IRFP240 Power MOSFET International Rectifier
IRFP240 N-Channel Power MOSFET Fairchild Semiconductor
IRFP240 Power MOSFET Vishay Siliconix

Other Datasheets by Intersil (now Renesas)

Part Number Description
IRFP240 N-Channel Power MOSFET
IRFP244 N-Channel Power MOSFETs
IRFP246 N-Channel Power MOSFETs
IRFP247 N-Channel Power MOSFETs
IRFP140N N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor IRFP244, IRFP245, IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. July 1998 Features • 15A and 14A, 275V and 250V • rDS(ON) = 0.28Ω and 0.