Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Features
- 15A and 14A, 275V and 250V.
- rDS(ON) = 0.28Ω and 0.34Ω.
- Single Pulse Avalanche Energy Rated.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- 275V, 250VDC Rated, 120VAC Line System Operation.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER IRFP244 IRFP245 IRFP24.