IRFP247 Overview
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching...
IRFP247 Key Features
- 15A and 14A, 275V and 250V
- rDS(ON) = 0.28Ω and 0.34Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- 275V, 250VDC Rated, 120VAC Line System Operation
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
