IRFR410 Description
IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching...
IRFR410 Key Features
- 1.5A, 500V
- rDS(ON) = 7.000Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- High Input Impedance
- 150oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”