IRFR4104PbF
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Key Features
- VDSS = 40V RDS(on) = 5.5mΩ G S ID = 42A
