IRFR4105PbF Description
l HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 0.045Ω ID = 27A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a...
IRFR4105PbF Key Features
- Surface Mount (IRFR4105)
- Straight Lead (IRFU4105)
- Fast Switching
- Fully Avalanche Rated