Datasheet Summary
- 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
Features
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- Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 24.5mΩ ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for...
