| Part Number | IRFR4105Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.
* * * * * Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 24.5mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest . |
IRFR4105Z Datasheet
The IRFR4105Z is a Power MOSFET.
| Part Number | IRFR4105Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR4105Z, IIRFR4105Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤24.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤24.5mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High Speed Power Switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |