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IRFU214 - N-Channel Power MOSFETs

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Key Features

  • 2.2A, 250V.
  • rDS(ON) = 2.000Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • High Input Impedance.
  • 150oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR214 IRFU214.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
IRFU220 N-Channel Power MOSFETs
IRFU110 N-Channel Power MOSFETs
IRFU120 N-Channel Power MOSFETs
IRFU320 N-Channel Power MOSFETs
IRFU410 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443. Features • 2.2A, 250V • rDS(ON) = 2.